Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

Front Cover; Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements; Copyright Page; Contents; Acknowledgments; Introduction: Scope and Purpose of Book; 1 Metal Oxide Semiconductor Field Effect Transistors; Part One: Basics of Metal Oxide Semiconductor Field Effect Transistors; Surface Space-Charge Regions in MOSFETs; Leakage Components in MOSFETs; Subthreshold Current; Gate-Oxide Leakage; S/D Junction Leakage; MOS Capacitors; Static Characterization of MOSFETs; Transfer from 2D to 3D Nanoscaled Transistors; Gate Integration in FinFETs.

Parasitic Sources in MOSFET StructureLithography of Nanoscaled MOSFETs; Sidewall Transfer Lithography; Part Two: Strain Engineering in Group IV Materials; Strain Design for MOSFETs; Strain Effect on Carrier Mobility; Basic Definitions; Carrier Mobility in MOSFETs with Strained Si Channel; Strain and Critical Thickness; Global Critical Thickness of SiGe Layers; Critical Thickness of SiGe Layers on Patterned Substrates; Critical Thickness of SiGe Layers Grown on Nano Features; Strain Measurements and Applications; Strain Measurement; Raman Spectroscopy; TEM Analysis.

High-Resolution X-Ray AnalysisPart Three: Chemical Vapor Deposition of Group IV Materials; Selective and Nonselective Epitaxy; Part Four: Improvement of the Channel Mobility; Effect of Recess Shape in S/D; Channel Materials and Mobility; III-V Materials; Graphene Material; Silicene, Germanene, and Other Similar 2D Materials; Germanium Material; References; 2 Basics of Integrated Photonics; General; Buried Channel Waveguide; Strip-Loaded Waveguide; Ridge Waveguide; Rib Waveguide; Basics of Lasers, Modulators, Detectors, and Wavelength Selective Devices; Lasers; Basics Of Photonic Detectors.

Detector CharacteristicsResponsivity; Dark Current; Noise Characteristics of Photodetectors; Modulators: Principles and Mechanisms of Optical Modulation; Photonics Switches: Spatial Routing of High-Speed Data Streams; Switches; Devices for Wavelength Division Multiplexed Systems; Devices Based on Spectrally Dependent Interference Effects; References; 3 Silicon and Group IV Photonics; Part One: Silicon Photonics Elements for Integrated Photonics; General Properties; Silicon Photonics Elements for Integrated Photonics: Modulators and Wavelength Selective Devices.

Silicon Electro-Optic ModulatorsWavelength Selective Devices in Silicon; The Ring Resonator; Part Two: Bandgap Engineering in Group IV Materials for Photonic Application; Part Three: Group IV Photodetectors; Integration of Photodiodes with Waveguide or MOSFETs; PhotoMOSFETs; Group IV-Based Lasers; Part Four: Graphene, New Photonic Material; Photodetectors; References; 4 Moore's Law for Photonics and Electronics; Downscaling of CMOS; Evolution of Logic CMOS Since 1970; Prior to NTRS and ITRS Roadmaps; After NRTS and ITRS; Future of Logic CMOS and Beyond CMOS; Transistor Physical Parameters.